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Telecommunication - DC to 65 GHz Wide Bandwidth InGaAs Photodiodes and Photoreceivers (2000)


Abhay M. Joshi
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628 USA

ABSTRACT

We have developed 65 GHz Wide Bandwidth InGaAs Photodiodes and Photoreceivers for optical fiber driven telecommunication applications. The Photodiode operates at a nominal reverse bias of +3V and has a minimum responsivity of 0.5 A/W at 1300 and 1550 nm wavelength. The Ripple Factor is less than ±1 dB for a wide band of frequencies, DC to 65 GHz. The salient feature of the PIN is an on-chip co-planar waveguide output for proper impedance matching. We have also designed Ultra Wide Bandwidth Amplifiers using InGaAs p-HEMT technology and monolithically integrated them with InGaAs Photodiodes. These Opto-electronic Integrated Circuits (OEICs) which combine optical, microwave, and digital functions on the same chip is a technology that has significant potential for commercial applications such as ethernet fiber local area networks and optical communications systems (Synchronized Optical Network SONET, ISDN, telephony and digital CATV). Important inter-service military applications are optically fed phased array systems and optically controlled microwave networks for airborne and spaceborne systems.

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