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Ewing, NJ – June 12, 2024
Typical Shunt Resistance for DSC24-290 Extended InGaAs Photodiode
Discovery Semiconductors Inc., a leading supplier of optical receivers, test instruments and sub-systems, has introduced several new products using its Extended InGaAs Photodiode technology for a variety of space applications. The devices are available in many configurations: Single Photodiodes, Balanced Photodiodes, and Amplified Optical Receivers, in different packages such as fiber coupled butterfly modules having K or SMA connector, fiber coupled Surface Mount Technology (SMT) modules having no co-ax connectors, and free space TO-5 packages having broad anti-reflection coatings.
These devices have undergone extensive reliability and radiation testing to ensure proper functioning in space. The company has successfully flown devices on NASA’s Materials International Space Experiment (MISSE) 9 mission to the International Space Station (ISS) and proved the device and packaging technology can withstand the rigors of space flight, as well as the re-entry from space to Earth.
The Space Qualified InGaAs, Short Wave Infrared, Extended InGaAs Photodiodes from Discovery Semiconductors Inc. are resilient to radiation and comprehensively tested for Protons, Gammas, constituent elements of the Galactic Cosmic Rays (GCR), & most recently for Carbon. Periodic radiation testing on these devices is performed at the NASA Space Radiation Laboratory (NSRL).
Multiple space applications require these Extended InGaAs devices, including spectroscopy, optical communication links, and rapid Doppler shift LIDAR. The packaged devices operate over a wide temperature range from extreme cryogenic up to +125 °C for special missions. The available bandwidth of these devices vary from a few MHz to 10+ GHz. The optical dynamic range may span from a few femto watts of optical input signal up to 50 mW, depending on the device configuration and application. The devices have wavelength coverage from 800 nm to 2400 nm at 25 °C, and are well suited for both direct detection and coherent detection.
References:
- 2021 Military & Aerospace Technology Innovators Awards announced for aerospace and defense achievement.
- In-situ Proton Radiation Testing of 2.4 Micron Wavelength Extended InGaAs Photodiodes at Dry Ice and Room Temperatures (2021)
Discovery Semiconductors, Inc., established in 1993, is an industry leader in manufacturing ultrafast, broadband (800 nm - 2400 nm) high optical power handling InGaAs photodetectors, optical receivers, balanced optical receivers, PAM4 linear optical receivers, coherent receivers and wideband RF amplifiers for 10G through 400G applications. In addition, Discovery offers several products for the space community in areas such as LIDAR, Telecom, Datacom, Sensing.
For additional information, including complete product specifications, operational capabilities and pricing, or to discuss your application in detail, please call Discovery at: (609) 434-1311 or fax: (609) 434-1317.
