Successful Space Flight Of High-Speed InGaAs Photodiode On-Board The International Space Station (2017)

  
SHARE :

Abhay Joshi ¹, Narasimha Prasad ², and Shubhashish Datta ¹
¹ Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, NJ 08628, USA
Tel: 609-434-1311, Fax: 609-434-1317
² NASA Langley Research Center
Hampton, VA 23681, USA

ABSTRACT

We have demonstrated a 16.8 GHz photodiode module that has survived 18 months on the ISS as part of the Materials International Space Station Experiment (MISSE) 7 mission without any change in device performance. This module was subjected to launch vibrations, as well as harsh space environment, namely temperature cycling from -157 °C to +121 °C 16 times a day, proton radiation from the inner Van Allen belt at the South Atlantic Anomaly, and GCR. This experiment serves as a pathway for increasing the TRL level of these photodiodes to 7 and beyond, thus, getting them space qualified for several NASA missions.

*Presented at ISS R&D Conference, 2017, Washington D.C.

 

Related links: Successful Space Flight of High-Speed InGaAs Photodiode Onboard the International Space Station (NTRS)

Previous, Next and Return To Papers and Patents Previous Back Next