DC to 50-GHz Wide-Bandwidth InGaAs Photodiodes and Photoreceivers (2017)

  
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Abhay M. Joshi & Xinde Wang
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628 USA
Tel: 609-434-1311, Fax: 609-434-1317

ABSTRACT

Discovery Semiconductors has developed 50 GHz "Dual-depletion InGaAs/InP Photodiodes". The PIN operates at -3V reverse bias and has minimum responsivity of 0.7 AAV at 1.3 and 1.55 um wavelength. The Ripple Factor is less than ±1 dB for a wide band of frequencies, DC to 50 GHz. The salient feature of the PIN is an on-chip coplanar waveguide output for proper impedance matching. The PIN exhibits group delay of less than ± 20 psec across the entire bandwidth. Discovery Semiconductors has also designed 50 GHz InGaAs PIN / p-HEMT Amplifier Photoreceiver Opto-electronic Integrated Circuit (OEIC) with a voltage conversion gain of 60 VAV at 1550 nm. The Photoreceiver OEIC exhibits an electric back reflection (S 22) of less than -10 dB across the entire 50 GHz bandwidth. The optical back reflection is better than -30 dB at 1300 and 1550 nm.

* SPIE Proc., Volume 10295, Republished 2017

 

Related links: DC to 50-GHz wide-bandwidth InGaAs photodiodes and photoreceivers

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