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Telecommunication - 100 GHz Dual-Depletion InGaAs/InP Photodiode (2000)


Donald A. Becker, Abhay M. Joshi, Daniel R. Mohr
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628 USA

ABSTRACT

A bandwidth of 100 GHz and group delays exhibiting variations of ± 2 psec have been modeled using a front-illuminated InGaAs/InP dual-depletion PIN photodiode. Fabrication with following active or passive elements, such as common gate impedance converter circuitry to reduce electrical back reflections, will use a monolithic design. Realization of this photodiode will represent a significant improvement over currently available photodiodes.

Keywords:  Bandwidth, InGaAs/InP, Photodiode, Impedance, Monolithic

* Paper presented at PSAA Conference, Monterey, February 2000.

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