Discovery Semiconductors manufactures photodetectors and balanced photoreceivers for 10 Gb, 40Gb, and 100 Gb applications.

Site Search

Follow Discovery Semiconductors on TwitterFollow Discovery Semiconductors on Twitter

Telecommunication - 100 GHz Dual-Depletion InGaAs/InP Photodiode (2000)

Donald A. Becker, Abhay M. Joshi, Daniel R. Mohr
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628 USA


A bandwidth of 100 GHz and group delays exhibiting variations of ± 2 psec have been modeled using a front-illuminated InGaAs/InP dual-depletion PIN photodiode. Fabrication with following active or passive elements, such as common gate impedance converter circuitry to reduce electrical back reflections, will use a monolithic design. Realization of this photodiode will represent a significant improvement over currently available photodiodes.

Keywords:  Bandwidth, InGaAs/InP, Photodiode, Impedance, Monolithic

* Paper presented at PSAA Conference, Monterey, February 2000.

previous next button Previous Back Next

Discovery Semiconductors footer line blue Home | Quality | Papers | News | About Us | Contact Us | Disclaimer | Privacy Policy | Help Viewing Our Site | Site Index
Discovery Semiconductors, Inc.® - 119 Silvia Street, Ewing, NJ 08628 USA
Tel: +1 (609) 434-1311 - Fax: +1 (609) 434-1317 Copyright ©1997-2017  All Rights Reserved