Discovery Semiconductors manufactures photodetectors and balanced photoreceivers for 10 Gb, 40Gb, and 100 Gb applications.

Site Search

Follow Discovery Semiconductors on TwitterFollow Discovery Semiconductors on Twitter

High Performance, High Reliability, Custom Dual InGaAs Photodiodes for 2 to 18 GHz Electronic Warfare (EW) Applications (2006)


A. M. Joshi, D. R. Mohr, D. A. Becker, A. Rumyantsev, and S. Lempke
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628, USA

ABSTRACT

We have manufactured custom, dual InGaAs photodiodes using our proprietary Dual-Depletion Region (DDR) technology. The devices demonstrate high reliability and superior RF performance, thus making them ideal for deployment in the field by services like the US Navy...

* Paper presented at GOMACTech Conference, San Diego, California, USA, 2006, paper 25.3 , pp 339-342.

previous next button Previous Back Next

Discovery Semiconductors footer line blue Home | Quality | Papers | News | About Us | Contact Us | Disclaimer | Privacy Policy | Help Viewing Our Site | Site Index
Discovery Semiconductors, Inc.® - 119 Silvia Street, Ewing, NJ 08628 USA
Tel: +1 (609) 434-1311 - Fax: +1 (609) 434-1317 Copyright ©1997-2017  All Rights Reserved