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High-Speed Low-Noise p-i-n InGaAs Photoreceiver at 2-um Wavelength (2008)


Abhay Joshi and Don Becker
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628, USA

ABSTRACT

A p-i-n InGaAs photoreceiver with a 3-dB bandwidth of 6 GHz at 2-um wavelength is presented. The photodiode, having a responsivity of 1.34 A/W and a dark current of 400 nA, is coupled to a transimpedance amplifier to provide a conversion gain of 670 V/W at room temperature.

*IEEE Photonics Technology Letters, Vol. 20, No. 8, April 15, 2008.

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